[2024]

1. Gilsang Yoon, Donghyun Go, Jounghun Park, Donghwi Kim, Jongwoo Kim, Ukju An, Jungsik Kim, and Jeong-Soo Lee, and Byoung Don Kong, "Impact of Electron and Hole Trap Profiles in BE-TOX on Retention Characteristics of 3D NAND Flash Memory", IEEE Transactions on Nanotechnology, vol 23, pp. 1-8 (2024)

2. Jounghun Park, Gilsang Yoon, Donghyun Go, Donghwi Kim, Hyun Chul Sagong, Jungsik Kim, and Jeong-Soo Lee, "Decomposition of Charge Loss Mechanisms in 3-D NAND Flash Memory: Impact of Cell Dimension via High-Temperature Long-Term Retention Characteristics", IEEE Transactions on Electron Devices, vol 71, no. 10, pp. 1-9 (2024)

3. Donghwi Kim, Gilsang Yoon, Donghyun Go, Jounghun Park, Jungsik Kim, and Jeong-Soo Lee, "Novel Dummy Cell Programming Scheme to Improve Retention Characteristics in 3-D NAND Flash Memory", IEEE Transactions on Electron Devices, vol 71, no. 8, pp. 4644-4648 (2024)

4. Wonyeong Choi, Seonghwan Shin, Jeonghyeon Do, Jongmin Son, Kihyun Kim, and Jeong-Soo Lee, "Influence of Surface Treatments on Urea Detection Using Si Electrolyte-Gated Transistors with Different Gate Electrodes", Micromachines, vol 15, no. 5 (2024)

5. Iksoo Park, Jaeyong Choi, Jungsik Kim, Byoung Don Kong, and Jeong-Soo Lee, "Effect of Quasi-One-Dimensional Properties on Source/Drain Contacts in Vertical Nanowire Field-Effect Transistors (VNWFETs)", Micromachines, vol 15, no. 4 (2024)

6. Seonghwan Shin, Sangwon Kim, Wonyeong Choi, Jeonghyeon Do, Jongmin Son, Kihyun Kim, Sungkey Jang, and Jeong-Soo Lee, "Sensing Characteristics of SARS-CoV-2 Spike Protein Using Aptamer-Functionalized Si-Based Electrolyte-Gated Field-Effect Transistor (EGT)", Biosensors, vol 14, no. 124. pp. 1-11 (2024)

[2023]

7. Ukju An, Gilsang Yoon, Donghyun Go, Jounghun Park, Donghwi Kim, Jongwoo Kim, and Jeong-Soo Lee, "Effects of Poly-Si Grain Boundary on Retention Characteristics under Cross-Temperature Conditions in 3-D NAND Flash Memory", Micromachines, vol 14, no. 12, pp. 1-11 (2023)

8. Donghyun Go, Gilsang Yoon, Jounghun Park, Donghwi Kim, Jiwon Kim, Jungsik Kim, and Jeong-Soo Lee, "Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory", Micromachines, vol. 13, no. 11, pp. 1-11 (2023)

9. Alexandra Parichenko, Wonyeong Choi, Seonghwan Shin, Marlena Stadtmüller, Rafael Gutierrez, Teuku Fawzul Akbar, Carsten Werner, Jeong-Soo Lee, Bergoi Ibarlucea, and Gianaurelio Cuniberti, "Hydrogel-gated silicon nanotransistor for SARS-CoV-2 antigen detection in physiological ionic strength," Advanced Materials Interfaces, vol. 14, no. 11, pp. 1-28 (2023)

10. Chi Zhang, Alexandra Parichenko, Wonyeong Choi, Seonghwan Shin, Luis Antonio Panes-Ruiz, Dmitry Belyaev, Tania Filipa Custodio, Christian Low, Jeong-Soo Lee, Bergoi Ibarlucea, and Gianauerlio Cuniberti, "Sybodies as Novel Bioreceptors toward Field-Effect Transistor-Based Detection of SARS-CoV-2 Antigens," ACS Applied Materials & Interfaces, vol. 15, no. 34, pp. 40191-40200 (2023)

11. Wonyeong Choi, Bo Jin, Seonghwan Shin, Jeonghyeon Do, Jongmin Son, Kihyun Kim, Jeong-Soo Lee, "Highly Sensitive Detection of Urea Using Si Electrolyte-Gated," Biosensors, vol. 13, no. 5, pp. 1-9 (2023)

12. Hong-Rae Kim, Ji-Hong Bong, Min-Jung Kang, Won-Bo Shim, Jeong-Soo Lee, and Jae-Chul Pyun, "One-step immunoassay based on filtration for detection of food poisoning-related bacteria," Talanta, vol. 255, no. 124203, pp. 1-8 (2023) 

[2022]

13. Jounghun Park, Jin-Woo Han, Gilsang Yoon, Donghyun Go, Donghwi Kim, Jungsik Kim, and Jeong-Soo Lee, "Single-Event Upset in 3D Charge-Trap NAND Flash Memories," IEEE Transactions on Electron Devices, vol. 69, no. 11, pp. 6089-6094 (2022) 

14. Xin Ming, Huan Chen, Ying Yang, Pu Zhao, Liumei Sun, Caisheng Zhang, Hyun-Jin Shin, Jeong-Soo Lee, Yong-Sam Jung, and Yingjuan Qian, "Porcine Enteric Coronavirus PEDV Induces the ROS-ATM and Caspase7-CAD-γH2AX Signaling Pathways to Foster Its Replication", Viruses, vol. 14, no. 8, pp. 1-7 (2022)

15. Iksoo Park, Seonghwan Shin, Jungsik Kim, Bo Jin, and Jeong-Soo Lee, "Effects of Carbon Incorporation on Electrical Characteristics and Thermal Stability of Ti/TiO2/n-Ge MIS Contact", IEEE Access, vol. 10, pp. 84689-84693 (2022)

16. Gilsang Yoon, Donghyun Go, Jounghun Park, Donghwi Kim, Jungsik Kim, and Jeong-Soo Lee, "Impact of P/E Stress on Trap Profiles in Bandgap-engineered Tunneling Oxide of 3D NAND Flash Memory", IEEE Access, vol. 10, pp. 62423-62428 (2022)

17. Iksoo Park, Donghun Lee, Bo Jin, Jungsik Kim, and Jeong-Soo Lee, "Improvement of Fermi-Level Pinning and Contact Resistivity in Ti/Ge Contact Using Carbon Implantation", Micromachines, vol. 13, no. 1, p. 108 (2022)

18. Donghoon Kim, Bo Jin, Sol-A Kim, Wonyoung Choi, Seonghwan Shin, Jiwon Park, Won Bo Shim, Kihyun Kim, and Jeong-Soo Lee, "An Ultrasensitive Silicon-based Electrolyte-gated Transistor for the Detection of Peanut Allergens", Biosensors, vol. 12, no. 1, p. 24 (2022)

[2021]

19. Donghoon Kim, Wonyoung Choi, Seonghwan Shin, Jiwon Park, Kihyun Kim, Bo Jin, and Jeong-Soo Lee, "Lumped-Capacitive Modeling and Sensing Characteristics of an Electrolyte-Gated FET Biosensor for the Detection of the Peanut Allergen", IEEE Access, vol. 9, pp. 168922-168929 (2021)

20. Jounghun Park, Gilsang Yoon, Donghyun Go, Jungsik Kim, and Jeong-Soo Lee, "Extraction of Nitride Trap Profile in 3-D NAND Flash Memory Using Intercell Program Pattern", IEEE Access, vol. 9, pp. 118794-118800 (2021)

21. Gilsang Yoon, Donghoon Kim, Iksoo Park, Bo Jin, and Jeong-Soo Lee, "Fabrication and Characterization of Nanonet-Channel LTPS TFTs using a nanoshpere assisted patterning technique", Micromachines, vol. 12, no.7, p. 741 (2021)

22. Iksoo Park, Jae-Bok Seol, Gilsang Yoon, and Jeong-Soo Lee, "Three-Dimensional Imaging of Carbon Clusters in Thermally Stable Nickel Silicides by Carbon Pre-Implantation", Applied Surface Science, vol. 539, no.15, p.148152 (2021)

[2020]

23. Donghoon Kim, Chanoh Park, Wonyoung Choi, Seonghwan Shin, Bo Jin, Rock-Hyun Baek, and Jeong-Soo Lee, "Improved long-term responses of Au-decorated Si nanowire FET sensor for NH3 detection", IEEE SENSORS JOURNAL, vol. 20, no. 5, pp. 2270-2277 (2020)

[2019]

24. Jungsik Kim, Jeong–Soo Lee, Jin-Woo Han, and Meyya Meyyappan, "Caution: Abnormal Variability Due to Terrestrial Cosmic Rays in Scaled-Down FinFETs", IEEE Transactions on Electron Devices, vol. 66, no.4 pp.1887-1891 (2019)

25. Jin-Woo Han, Jungsik Kim, Dong-Il Moon, Jeong-Soo Lee, and M. Meyyappan, "Soft Error in Saddle Fin Based DRAM", IEEE Electron Devices Letters, vol. 40, no. 4, pp. 494-497 (2019)

26. Chanoh Park, Wonyoung Choi, Donghoon Kim, Bo Jin, and Jeong-Soo Lee, "Highly Sensitive Detection of Influenza A (H1N1) Virus With Silicon Nanonet BioFETs", IEEE SENSORS JOURNAL, vol. 19, no. 23, pp. 10985-10990 (2019)

[2018]

27. Bo Jin, Ga-Yeon Lee, Chanoh Park, Donghoon Kim, Wonyoung Choi, Jae-Woo Yoo, Jae-Chul Pyun, and Jeong-Soo Lee, "Electrical Characteristics and pH Response of a Parylene-H Sensing Membrane in a Si-Nanonet Ion-Sensitive Field-Effect Transistor", Sensors, vol.18, no. 11, p. 3892 (2018)

28.  Jungyoung Lee, Hojoon Lee, Bo Jin, Hyeongwan Oh, Sangwon Baek, Gilsang Yoon, Yongsu Lee, Rock-Hyun Baek and Jeong-Soo Lee, "Impact of Geometrical Parameters on the Electrical Performance of Network-Channel Polysilicon Thin-Film Transistors,” Japanese Journal of Applied Physics, vol. 57, no. 10, p. 104001 (2018)

29. Hyeongwan Oh, Jiwon Kim, Rock-Hyun Baek, and Jeong-Soo. Lee, “Threshold voltage variation depending on single grain boundary and stored charges in an adjacent cell for vertical silicon-oxide-nitride-oxide-silicon (SONOS) NAND flash memory,” Japanese Journal of Applied Physics, vol. 57, no. 4S (2018)

30. Jiwon kim, Hyeongwan Oh, Bo Jin, Rock-Hyun Baek, and Jeong-Soo Lee, "Analog Figure-of-merits Comparison of Gate Workfunction Variability and Random Discrete Dopant between Inversion-mode and Junctionless Nanowire FETs", Journal of Nanoscience and Nanotechnology, vol. 18, no. 9, pp. 6598-6601 (2018)

31. Jungsik Kim, Jeong-Soo Lee, Jin-Woo Han, and Meyya Meyyappan, "Single-Event Transient in FinFETs and Nanosheet FETs", IEEE Electron Device Letters, vol. 39, no. 12, pp. 1840-1843, (2018)

[2017]

32. Jiwon Kim, Hyeongwan Oh, Jungsik Kim, Rock-Hyun Baek, Jin-Woo Han, Meyya Meyyappan, and Jeong-Soo Lee, "Work Function Consideration in Vacuum Field Emission Transistor Design", Journal of Vacuum Science & Technology B, vol. 35, no. 6, pp. 062203 (2017)

33. Sangwon Baek, Junyoung Lee, Iksoo Park, Rock-Hyun Baek, and Jeong-Soo Lee, "Systematic analysis of oxide trap distribution of 4H-SiC DMOSFETs using TSCIS and its correlation with BTI and SILC behavior", Solid-State Electronics, vol. 140, pp. 18-22 (2017)

34. Nanki Hong, Chanoh Park, Donghoon Kim, Ki-Soo Jeong, Jun-Sik Yoon, Bo Jin, Meyya Meyyappan, and Jeong-Soo Lee, "Buffer effects of two functional groups against pH variation at aminosilanized Electrolyte-Oxide-Semiconductor (EOS) capacitor", Sensors and Actuators B: Chemical, vol. 242, pp 324–331 (2017)

35. Hojoon Lee, Junyoung Lee, Sangwon Baek, Woong Hee Jeong, Yongsu Lee, Taehoon Yang, and Jeong-Soo Lee, "Highly Enhanced Performance of Network-Channel Polysilicon Thin-Film Transistors", IEEE Electron Device Letters, vol. 38, no. 2, pp. 187-190 (2017)

36. Jungsik Kim, Hyeongwan Oh, Jiwon Kim, Meyya Meyyappan, and Jeong-Soo Lee, “Electrical characteristics of tunneling field-effect transistors with asymmetric channel thickness,” Japanese Journal of Applied Physics, vol. 50, pp. 024201 (2017)

37. Hojoon Lee, Junyoung Lee, Hyeongwan Oh, Jiwon Kim, Jeong-Soo Lee, “Investigation of Hot-Carrier Reliability in Junctionless Polysilicon Thin-Film Transistors”, Journal of Nanoscience and Nanotechnology, vol. 17, no. 5, pp 3375-3377 (2017)

[2016]

38. S. Jeong, H. Lee, J. –S. Lee, “Electrical Characteristics of Top-Gated Graphene Field Effect Transistors Fabricated on Stainless Steel (STS) Substrate”, Journal of Nanoscience and Nanotechnology, vol 16, No. 5, pp. 5159-5163 (2016)

39. H. Oh, J. Kim, J. Lee, T. Rim, C. –K. Baek, and J. –S. Lee, “Effects of single grain boundary and random interface traps on electrical variations of sub-30nm polysilicon nanowire structures”, Microelectronic Engineering, vol. 149, no. 5, pp. 113 (2016)

40. K. Kim, C. Park, D. Kwon, D. Kim, M. Meyyappan, S. Jeon, and J. –S. Lee, “Silicon nanowire biosensors for detection of cardiac troponin I (cTnI) with high sensitivity”, Biosensors and Bioelectronics, vol. 77, no. 15 pp. 695 (2016)

41. J. Kim, J. Kim, H. Oh, M. Meyyappan, J. -W. Han, and J. -S. Lee, “Design guidelines for nanoscale vacuum field emission transistors”, Journal of Vacuum Science & Technology B, vol. 34, 042201 (2016)

42. I. Lee, S.-W. Lee, K.-Y. Lee, C. Park, D. Kim, J. –S. Lee, H. Yi, and B. Kim, “A Reconfigurable and Portable Highly Sensitive Biosensor Platform for ISFET and Enzyme-based Sensors,”, IEEE Sensors Journal, vol. 16, no. 11, pp. 1443-4451 (2016)

[2015]

43. J. Kim, H. Oh, J. Lee, C.-K. Baek, M. Meyyappan, and J.-S. Lee, “Three-dimensional simulation of threshold voltage variations due to an oblique single grain boundary in sub-40nm polysilicon nanowire FETs”, Semiconductor Science and Technology, vol. 30, no. 8, pp. 085015, Aug. 2015.

44. J. H. Hong, S. H. Lee, Y. R. Kim, E. Y. Jeong, J. S. Yoon, J. –S. Lee, R. H. Baek, and Y. H. Jeong, “Impact of the spacer dielectric constant on parasitic RC and design guidelines to optimize DC/AC performance in 10-nm-node Si-nanowire FETs”, Japanese Journal of Applied Physics, vol. 54, no. 4S, pp. 04DN05-1 (2015)

45. J. S. Yoon, E. Y. Jeong, S. H. Lee, Y. R. Kim, J. H. Hong, J. –S. Lee, and Y. H. Jeong, “Extraction of source/drain resistivity parameters optimized for double-gate FinFETs”, Japanese Journal of Applied Physics, vol. 54, no. 4S, pp. 04DC06-1 (2015)

46. E. Y. Jeong, M. J. Deen, C. H. Chen, R. H. Baek, J. –S. Lee, and Y. H. Jeong, “Physical DC and thermal noise models of 18 nm double-gate junctionless p-type MOSFETs for low noise RF applications”, Japanese Journal of Applied Physics, vol. 54, no. 4S, pp. 04DC08-1 (2015)

47. E. Y. Jeong, J. S. Yoon, C. –K. Baek, Y. R. Kim, J. H. Hong, J. –S. Lee, R. H. Baek, and Y. H. Jeong, “Investigation of RC Parasitics Considering Middle-of-the-Line in Si-Bulk FinFETs for Sub-14-nm Node Logic Applications”, IEEE Transactions on Electron Devices, vol. 62, no. 10, pp. 3441 (2015)

48. J. S. Yoon, E. Y. Jeong, C. –K. Baek, Y. R. Kim, J. H. Hong, J. –S. Lee, R. H. Baek, and Y. H. Jeong, “Junction Design Strategy for Si Bulk FinFETs for System-on-Chip Applications Down to the 7-nm Node”, IEEE Electron Device Letters, vol. 36, no. 10, pp. 994 (2015)

[2014]

49. B. Jin, T. Lim, S. Ju, M. I. Latypov, H. S. Kim, M. Meyyappan, and J.-S. Lee, "Ga-doped indium oxide nanowire phase change random access memory cells," Nanotechnology, vol. 25, no. 5, pp. 055205 (2014)

50. T. Rim, K. Kim, C.-K. Baek, Y.-H. Jeong, J.-S. Lee, and M. Meyyappan, "Silicon Nanowire Biologically Sensitive Field Effect Transistors: Electrical Characteristics and Applications," Journal of Nanoscience and Nanotechnology, vol. 14, no. 1, pp. 1-14 (2014)

51. B. Jin, T. Lim, S. Ju, M. I. Latypov, D.-H. Pi, H. S. Kim, M. Meyyappan and J.-S. Lee, “Investigation of thermal resistance and power consumption in Ga-doped indium oxide (In2O3) nanowire phase change random access memory,” Applied Physics Letters, vol. 104, pp. 103510 (2014)

52. K. Davami, M. Shaygan, N. Kheirabi, J. Zhao, D. A. Kovalenko, M. H. Rümmeli, J. Opitz, G. Cuniberti, J.-S. Lee, and M. Meyyappan,” Synthesis and characterization of carbon nanowalls on different substrates by radio frequency plasma enhanced chemical vapor deposition,” Carbon, vol. 72, pp. 372-380 (2014)

53. C. W. Myung, I. H. Won, H. Y. Kim, J.-S. Lee, G. S. Yun, and J. K. Lee, “Finite Amplitude Effects on Landau Damping and Diminished Transportation of Trapped Electrons,” Journal of the Physical Society of Japan, vol. 83, no. 7, pp. 074502 (2014)

54. M. Shaygan, T. Gemming, V. Bezugly, G. Cuniberti, J.-S. Lee, and M. Meyyappan, “In Situ Observation of Melting Behavior of ZnTe Nanowires,” The Journal of Physical Chemistry C, vol. 118, no. 27, pp. 15061-15067 (2014)

55. S.-H. Lee, Y.-R. Kim, J.-H. Hong, E.-Y. Jeong, J.-S. Yoon, C.-K. Baek, D.-W. Kim, J.-S. Lee, and Y.-H. Jeong, “Investigation of Low-Frequency Noise in p-type Nanowire FETs: Effect of Switched Biasing Condition and Embedded SiGe Layer,” IEEE Electron Device Letters, vol. 35, no. 7 (2014)

56. J. Kim, T. Rim, J. Lee, C.-K. Baek, M. Meyyappan, and J.-S. Lee, “Threshold Voltage Variations Due to Oblique Single Grain Boundary in Sub-50 nm Poly-Silicon Channel”, IEEE Transactions on Electron Devices, vol. 61, no. 8 (2014)

57. D. Kang, T. Rim, C.-K Baek, M. Meyyappan and J.-S. Lee, “Thermally Phase-Transformed In2Se3 Nanowires for Highly Sensitive Photodetectors”, Small, vol. 10, no.18 (2014)

58. K. Kim, T. Lim, C. Park, D. Kim, M. Meyyappan, and J.-S. Lee, “Suspended Honeycomb Nanowire ISFETs for Improved Stiction-free Performance”, Nanotechnology, vol. 25, no. 34, pp.345501 (2014)

59. M. Shaygan, K. Davami, N. Kheirabi, C.K. Baek, G. Cuniberti, M. Meyyappan, J.-S. Lee, "Single-crystalline CdTe nanowire field effect transistors as nanowire-based photodetector," Physical Chemistry Chemical Physics, vol. 16, Issue 41, pp 22687-22693 (2014)

60. M. Shaygan, N. Kheirabi, K. Davami, B. Mortazavi, J.-S. Lee, G. Cuniberti, M. Meyyappan, "Annealing effect on the thermal conductivity of thermoelectric ZnTe nanowires," Materials Letters, vol. 135, pp. 87-91 (2014)

61. B. Jin, J. Kim, D.-H. Pi, H. S. Kim, M. Meyyappan, and J.-S. Lee, “Role of an encapsulating layer for improved resistance drift in phase change random access memory”, AIP Advances, vol. 4, no. 12, pp. 127155 (2014)

[2013]

62. D. Kang, T. Rim, C.-K. Baek, M. Meyyappan, and J.-S. Lee, “Investigation of electromigration in In2Se3 nanowire for phase change memory devices,” Applied Physics Letters, vol. 103, pp. 233504 (2013)

63. K. Davami, A. Weathers, N. Kheirabi, B. Mortazavi, M. T. Pettes, L. Shi, J.-S. Lee, and M. Meyyappan, “Thermal Conductivity of ZnTe Nanowires,” Journal of Applied Physics, vol. 114, pp. 134314 (2013)

64. S.-J. Joo, S. Baek, S.-C. Kim, and J.-S. Lee, “Simultaneous Formation of Ohmic Contacts on p+ and n+ 4H-SiC Using a Ti/Ni Bilayer,” Journal of Electronic Materials, vol. 42, no. 10, pp.2897-2904 (2013)

65. B. Jin, D. Kang, J. Kim, M. Meyyappan, and J.-S. Lee, "Thermally Efficient and Highly Scalable In2Se3 Nanowire Phase Change Memory," Journal of Applied Physics, vol. 113, no. 16, pp. 164303-6 (2013)

66. Y.-R. Kim, S.-H. Lee, C.-W. Sohn, D.-Y. Choi, H.-C. Sagong, S. Kim, E.-Y. Jeong, D.-W. Kim, H. Hong, C.-K. Baek, J.-S. Lee, and Y.-H. Jeong, “Simple S/D Series Resistance Extraction Method Optimized for Nanowire FETs,” IEEE Electron Device Letters, vol. 34, no. 7. pp. 828-830 (2013)

67. T. Rim, K. Kim, N. Hong, W. Ko, C.-K. Baek, S. Jeon, M. J. Deen, M. Meyyappan, Y.-H. Jeong, and J.-S. Lee, “Investigation of the electrical stability of Si-nanowire biologically sensitive field-effect transistors with embedded Ag/AgCl pseudo reference electrode,” RSC Advances., vol. 3, no. 21, 7963-7969 (2013)

68. T. Rim, K. Kim, S. Kim, C.-K. Baek, M. Meyyappan, Y.-H. Jeong, and J.-S. Lee, "Improved Electrical Characteristics of Honeycomb Nanowire ISFETs," IEEE Electron Device Letters, vol. 34, no. 8 (2013)

69. C.-W. Sohn, C. Y. Kang, M.-D. Ko, D.-Y. Choi, H. C. Sagong, E.-Y. Jeong, C.-H. Park, S.-H. Lee, Y.-R. Kim, C.-K. Baek, J.-S. Lee, J. C. Lee, and Y.-H. Jeong, "Analytic Model of S/D Series Resistance in Trigate FinFETs with Polygonal Epitaxy," IEEE Transactions on Electron Devices, vol. 60, no. 4, pp. 1302-1309 (2013)

70. C.-K. Baek, D. Kang, J. Kim, B. Jin, T. Rim, S. Park, M. Meyyappan, Y.-H. Jeong, J.-S. Lee, “Improved performance of In2Se3 nanowire phase-change memory with SiO2 passivation,” Solid State Electronics, vol. 80, pp. 10-13 (2013)

71. K. Davami, J. Pohl, M. Shaygan, N. Kheirabi, H. Faryabi, G. Cuniberti, J.-S. Lee and M. Meyyappan, “Bandgap engineering of CdxZn1-xTe nanowires,” Nanoscale, vol.5, pp. 932 -935 (2013)

72. M. S. Park, Y. Kim, K. T. Lee, C. Y. Kang, B. G. Min, J. Oh, P. Majhi, H. H. Tseng, J. C. Lee, S. K. Banerjee, J.-S. Lee, R. Jammy, and Y.-H. Jeong, "Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs," Microelectronic Engineering, vol. 112, pp. 80-83 (2013)

73. D.-Y. Choi, C.-W. Shon, H.-C. Sagong, E.-Y. Jung, C. Y. Kang, J.-S. Lee, Y.-H. Jeong, "Improved Degradation and Recovery Characteristics of SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Negative-Bias Temperature Stress,” Japanese Journal of Applied Physics, vol. 52, no. 4s, pp. 04CC21 (2013)

[2012]

74. C.-H. Park, M.-D. Ko, K. Kim, S.-H. Lee, J. S.Yoon, J.-S. Lee, Y.-H. Jeong, “Investigation of Low-Frequency Noise Behavior After Hot-Carrier Stress in an n-Channel Junctionless Nanowire MOSFET,” IEEE Electron Device Letters, vol. 33, no. 11, pp. 1538-1540 (2012)

75. N. Agoulmine, K. Kim, S. Kim, T. Rim, J.-S. Lee, M. Meyyappan, “Enabling communication and cooperation in bio-nanosensor networks: toward innovative healthcare solutions,” IEEE Wireless Communications, vol.19, pp. 42-51 (2012)

76. C.-W. Sohn, C. Y. Kang, R. H. Baek, D.-Y. Choi, H.-C. Sagong, E.-Y. Jeong, C.-K. Baek, J.-S. Lee, J. C. Lee, Y. -H. Jeong, “Device Design Guidelines for Nanoscale FinFETs in RF/Analog Applications,” IEEE Electron Device Letters, vol. 33, no. 9, pp. 1348-1350 (2012)

77. N. R. Das, M. W. Shinwari, M. J. Deen, J.-S. Lee, “Electron states in a silicon nanowire in the presence of surface potential and field,” Nanotechnology, vol. 23, no.41, pp. 415201 (2012)

78. S.-H. Lee, C.-K. Baek, S. Park, D.-W. Kim, D. K. Sohn, J.-S. Lee, D. M. Kim, Y.-H. Jeong, “Characterization of Channel-Diameter-Dependent Low-Frequency Noise in Silicon Nanowire Field Effect Transistors,” IEEE Electron Device Letters, vol. 33, no. 10, pp. 1234-1236 (2012)

79. H. Faryabi, K. Davami, N. Kheirabi, M. Shaygan, J.-S. Lee, M. Meyyappan, “Post-growth modification of electrical properties of ZnTe nanowires,” Chemical Physics Letters, vol. 543, no. 10, pp. 117-120 (2012)

80. C.-H. Park, M.-D. Ko, K. Kim, R.-H. Baek, C.-W. Sohn, C.-K. Baek, S. Park, M. J. Deen, Y.-H. Jeong, and J.-S. Lee, "Electrical characteristics of 20-nm junctionless Si nanowire transistors," Solid State Electronics, vol. 73, pp. 7-10 (2012)

81. D. Lee, K. Lee, S. Jeong, J. Lee, B. Choi, J.-S. Lee, and O. Kim, “Process optimization for synthesis of high-quality graphene films by low-pressure chemical vapor deposition,” Japanese Journal of Applied Physics, vol. 51, no. 6, pp. 06FD21-06FD21-4 (2012)

82. K. Davami, H. M. Ghassemi, R. S. Yassar, J. S. Lee, M. Meyyappan, “Thermal breakdown of ZnTe nanowires,” ChemPhysChem, vol. 13, no. 1, pp.347-352 (2012)

[2011]

83. H.-C. Sagong, C. Y. Kang, C.-W. Sohn, D.-Y. Choi, E.-Y. Jeong, C.-K. Baek, J.-S. Lee, and Y.-H. Jeong, “New Investigation of Hot-Carrier Degradation on RF Small-Signal Parameter and Performance in High-k/Metal-Gate nMOSFETs,” IEEE Electron Device Letters, vol. 32, no. 12, pp. 1668-1670 (2011)

84. K. Davami, B. Mortazavi, H. M. Ghassemi, R. S. Yassar, J.-S. Lee, Y. Rémond, M. Meyyappan, “A computational and experimental investigation of the mechanical properties of single ZnTe nanowires,” Nanoscale, vol. 4, no.1, pp. 897-903 (2011)

85. H.-C. Sagong, C. Y. Kang, C.-W. Sohn, K. Jeon, E.-Y. Jeong, D.-Y. Choi, C.-K. Baek, J.-S. Lee, J. C. Lee, and Y.-H. Jeong, “ Comprehensive Study of Quasi-Ballistic Transport in High-k/Metal Gate nMOSFETs,” IEEE Electron Device Letters, vol. 32, no. 11, pp. 1474-1476 (2011)

86. D.-Y. Choi, K.-T. Lee, C.-K. Baek, C.-W. Sohn, H.-C. Sagong, E.-Y. Jung, J.-S. Lee, and Y.-H. Jeong, “Interfacial-Layer-Driven Dielectric Degradation and Breakdown of HfSiON/SiON Gate Dielectric nMOSFETs,” IEEE Electron Device Letters, vol. 32, no. 10, pp. 1319-1321 (2011)

87. S. Kim, T. Rim, K. Kim, U. Lee, E. Baek, H. Lee, C.-K. Baek, M. Meyyappan, M. J. Deen, and J.-S. Lee, “Silicon Nanowire Ion Sensitive Field Effect Transistor with Integrated Ag/AgCl Electrode: pH Sensing and Noise Characteristics,” Analyst, vol. 136, issue 23, pp. 5012-5016 (2011)

88. K. Davami, H. M. Ghassemi, X. H. Sun, R. S. Yasser, J.-S. Lee, and M. Meyyappan, “In situ observation of morphological change in CdTe nano- and submicron wires,” Nanotechnology, vol. 22, no. 43, pp. 435204 (2011)

89. K. Davami, S. M. S. Ghassemi, R. Shabazian-Yassar, J.-S. Lee, and M. Meyyappan, “In-Situ TEM Monitoring of Thermal Decomposition in CdTe and ZnTe Nanowires,” Microscopy and Microanalysis, vol. 17 (2011)

90. R.-H. Baek, C.-K. Baek, H.-S. Choi, J.-S. Lee, Y. Y. Yeoh, K. H. Yeo, D.-W. Kim, D. M. Kim, Y.-H. Jeong, "Characterization and modeling of 1/f noise in Si-nanowire FETs: effects of cylindrical geometry and different processing of oxides," IEEE Transaction on Nanotechnology, vol. 10, no. 3, pp.417-423 (2011)

91. C.-W. Sohn, H.-C. Sagong, E.-Y. Jeong, D.-Y. Choi, M. S, Park, J.-S. Lee, C. Y. Kang, R. Jammy, Y.-H. Jeong, “Analysis of Abnormal Upturns in Capacitance-Voltage Characteristics for MOS Devices with High-k Dielectrics,” IEEE Electron Device Letters, vol. 32, no. 4, pp. 434-436 (2011)

92. R.-H. Baek, C.-K. Baek, S.-H. Lee, S. D. Suk, M. Li, Y. Y. Yeoh, K. H. Yeo, D.-W. Kim, J.-S. Lee, D. M. Kim, and Y.- H. Jeong, “C-V Characteristics in Undoped Gate-All-Around Nanowire FET Array,” IEEE Electron Device Letters, vol. 32, no. 2, pp. 116-118 (2011)

93. K. Davami, D. G. Kang, J.-S. Lee, M. Meyyappan,“Synthesis of ZnTe nanostructures by vapor-liquid-solid technique,” Chemical Physics Letters, vol. 504, no. 1-3, pp. 62-66 (2011)

[2010]

94. A. Chung, M. J. Deen, J.-S. Lee, and M. Meyyappan, “nanoscale memory devices,” Nanotechnology, vol. 21, pp. 412001 (2010)

95. M. S. Park, K. T. Lee, C. Y. Kang, G.-B. Choi, H. C., Sagong, C. W. Sohn, B. G. Min, J. Oh, P. Majhi, H. H. Tseng, J. C. Lee, J.-S. Lee, R. Jammy, and Y.-H. Jeong, “The Effect of a Si Capping Layer on RF Characteristics of High-k/Metal Gate SiGe Channel pMOSFETs,” IEEE Electron Device Letters, vol. 31, no. 10, pp. 1104-1106 (2010)

96. M. Meyyappan and J.-S. Lee, “The Quiet Revolution of Inorganic Nanowires: Fabrication Techniques and Potential Applications", IEEE Nanotechnology Magazine, vol. 4, pp. 4-9 (2010)

97. R.-H. Baek, C.-K. Baek, S. W. Jung, Y. Y. Yeoh, D. W. Kim, J.-S. Lee, D. M. Kim, and Y.-H. Jeong, "Comparison of Series Resistance and Mobility Degradation Extracted from n- and p-Type Si-Nanowire Field Effect Transistors Using the Y-Function Technique," Japanese Journal of Applied Physics, vol. 49, pp. 04DN06-1~5 (2010)

98. Q. Ahsanulhaq, J. H. Kim, J.-S. Lee, and Y. B. Hahn, “Electrical and gas sensing properties of ZnO nanorod arrays directly grown on a four-probe electrode system,” Electrochemistry Communications, vol. 12, pp. 475-478 (2010)

99. R.-H. Baek, C.-K. Baek, S. W. Jung, Y. Y. Yeoh, D. W. Kim, J.-S. Lee, D. M. Kim, and Y.-H. Jeong, "Characteristics of the Series resistance Extracted from Si-Nanowire FETs using the Y-function Technique," IEEE Transactions on Nanotechnology, vol. 9, no. 2, pp. 212-217 (2010)

100. D. S.-W. Park, A. K. Nallani, D. Cha, G.-S. Lee, M. J. Kim, G. Skidmore, J.-B. Lee, and J.-S. Lee, “A Sub-micron Metallic Electrothermal Gripper,” Microsystem Technologies, vol. 16, no 3, pp. 367-373 (2010)

[2009]

101. Y. K. Park, A. Umar, J. S. Kim, H. Y. Yang, J.-S. Lee, and Y. H. Hahn, “Single ZnO Nanowire Based High-Performance Field Effect Transistors (FETs),” Journal of Nanoscience and Nanotechnology, vol. 9, pp. 5839-5844 (2009)

[2008]

102. A. Chandrashekar, S. Ramachandran, G. Pollack, J.-S. Lee, G. S. Lee, and L. J. Overzet, “Forming carbon nanotube composite by directly coating forests with inorganic materials using low pressure chemical vapor deposition,” Thin Solid Films, vol. 517, no. 2, pp. 525-530 (2008)