Nano Devices and Processing Lab

Donghwi Kim

● Course: Ph. D course, 2 year

● Biography: Ph. D Electrical Engineering, Pohang University of Science and Technology (Mar. 2023 - )

M.S. Electrical Engineering, Pohang University of Science and Technology (Mar. 2021 - Feb. 2023)

 B.S. Electrical Engineering, Pohang University of Science and Technology (Mar. 2016 - Feb. 2021)

● Research interests: V-NAND Reliability

● E-mail: kdh3879@postech.ac.kr

● Publications

International Journals

1. Gilsang Yoon, Donghyun Go, Jounghun Park, Donghwi Kim, Jongwoo Kim, Ukju An, Jungsik Kim, and Jeong-Soo Lee, and Byoung Don Kong, "Impact of Electron and Hole Trap Profiles in BE-TOX on Retention Characteristics of 3D NAND Flash Memory", IEEE Transactions on Nanotechnology, vol 23, pp. 1-8 (2024)

2. Jounghun Park, Gilsang Yoon, Donghyun Go, Donghwi Kim, Hyun Chul Sagong, Jungsik Kim, and Jeong-Soo Lee, "Decomposition of Charge Loss Mechanisms in 3-D NAND Flash Memory: Impact of Cell Dimension via High-Temperature Long-Term Retention Characteristics", IEEE Transactions on Electron Devices, vol 71, no. 10, pp. 1-9 (2024)

3. Donghwi Kim, Gilsang Yoon, Donghyun Go, Jounghun Park, Jungsik Kim, and Jeong-Soo Lee, "Novel Dummy Cell Programming Scheme to Improve Retention Characteristics in 3-D NAND Flash Memory", IEEE Transactions on Electron Devices, vol 71, no. 8, pp. 4644-4648 (2024)

4. Ukju An, Gilsang Yoon, Donghyun Go, Jounghun Park, Donghwi Kim, Jongwoo Kim, and Jeong-Soo Lee, "Effects of Poly-Si Grain Boundary on Retention Characteristics under Cross-Temperature Conditions in 3-D NAND Flash Memory", Micromachines, vol 14, no. 12, pp. 1-11 (2023)

5. Donghyun Go, Gilsang Yoon, Jounghun Park, Donghwi Kim, Jiwon Kim, Jungsik Kim, and Jeong-Soo Lee, "Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory", Micromachines, vol. 13, no. 11, pp. 1-11 (2023)

6. Jounghun Park, Jin-Woo Han, Gilsang Yoon, Donghyun Go, Donghwi Kim, Jungsik Kim, and Jeong-Soo Lee, "Single-Event Upset in 3D Charge-Trap NAND Flash Memories," IEEE Transactions on Electron Devices, vol. 69, no. 11, pp. 6089-6094 (2022)

7. Gilsang Yoon, Donghyun Go, Jounghun Park, Donghwi Kim, Jungsik Kim, and Jeong-Soo Lee, "Impact of P/E Stress on Trap Profiles in Bandgap-engineered Tunneling Oxide of 3D NAND Flash Memory", IEEE Access, vol. 10, pp. 62423-62428 (2022)

International Conferences

1. Jounghun Park, Gilsang Yoon, Donghyun Go, Donghwi Kim, Ukju An, Jongwoo Kim, Jungsik Kim, and Jeong-Soo Lee, "Decomposition of Vertical and Lateral Charge Loss in Long-term Retention of 3-D NAND Flash Memory", IEEE International Reliability Physics Symposium (IRPS), Monterey, California, USA, Mar 26-30, 2023. 

2. Ukju An, Gilsang Yoon, Donghyun Go, Jounghun Park, Donghwi Kim, Jongwoo Kim, and Jeong-Soo Lee, "Temperature-induced Instability of Retention Characteristics in 3-D NAND Flash Memory", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Seoul, Korea, Mar 7-10, 2023. 

3. Jounghun Park, Gilsang Yoon, Donghyun Go, Donghwi Kim, Jungsik Kim, and Jeong-Soo Lee, "Analysis of Vt Gain and Related Lateral Migration Using Program-Erase-Program Pattern in 3-D NAND Flash Memory", International Conference on Solid State Devices and Materials (SSDM), ALL-VIRTUAL conference, 2021.

4. Donghyun Go, Gilsang Yoon, Jounghun Park, Donghwi Kim, Jungsik Kim, and Jeong-Soo Lee, "Electrical Variations of Non-Circular Cell Structure in 3D NAND Flash Memory Using TCAD-Machine Learning Framework", NANO KOREA 2021 Symposium, Korea, July 7-9, 2021.

Domestic Conferences

1. 김종우, 윤길상, 고동현, 박정훈, 김동휘, 안욱주, 최재용, 이정수, "Improving Retention Characteristics in 3D NAND Flash Memory by Re-Program with Counter-Pulse", 반도체공학회 하계학술대회 (ISE 2023 Summer)

2. 안욱주, 윤길상, 고동현, 박정훈, 김동휘, 김종우, 이정수, "Retention Characteristics with Cross-Temperature Effects in 3-D NAND Flash Memory", 한국반도체학술대회 (KCS 2023)

3. 김동휘, 윤길상, 고동현, 박정훈, 이정수, "Analysis of Short-Term Retention in 3-D NAND Flash Memory Using Charge Control Pulse Scheme", 한국반도체학술대회 (KCS 2022)

Patents

● Awards