Nano Devices and Processing Lab

Jounghun Park

● Course: Integrated course, 5 year

● Biography: Ph. D. Electrical Engineering, Pohang University of Science and Technology (Sep. 2019 - )

 B.S. Electrical Engineering, Pohang University of Science and Technology (Mar. 2015 - Aug. 2019)

● Research interests: V-NAND Reliability

● E-mail: mancity@postech.ac.kr

● Publications

International Journals

1. Ukju An, Gilsang Yoon, Donghyun Go, Jounghun Park, Donghwi Kim, Jongwoo Kim, and Jeong-Soo Lee, "Effects of Poly-Si Grain Boundary on Retention Characteristics under Cross-Temperature Conditions in 3-D NAND Flash Memory", Micromachines, vol 14, no. 12, pp. 1-11 (2023) 

2. Donghyun Go, Gilsang Yoon, Jounghun Park, Donghwi Kim, Jiwon Kim, Jungsik Kim, and Jeong-Soo Lee, "Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory", Micromachines, vol. 13, no. 11, pp. 1-11 (2023)

3. Jounghun Park, Jin-Woo Han, Gilsang Yoon, Donghyun Go, Donghwi Kim, Jungsik Kim, and Jeong-Soo Lee, "Single-Event Upset in 3D Charge-Trap NAND Flash Memories," IEEE Transactions on Electron Devices, vol. 69, no. 11, pp. 6089-6094 (2022)

4. Gilsang Yoon, Donghyun Go, Jounghun Park, Donghwi Kim, Jungsik Kim, and Jeong-Soo Lee, "Impact of P/E Stress on Trap Profiles in Bandgap-engineered Tunneling Oxide of 3D NAND Flash Memory", IEEE Access, vol. 10, pp. 62423-62428 (2022)

5. Jounghun Park, Gilsang Yoon, Donghyun Go, Jungsik Kim, and Jeong-Soo Lee, "Extraction of Nitride Trap Profile in 3-D NAND Flash Memory Using Intercell Program Pattern", IEEE Access, vol. 9, pp. 118794-118800 (2021)

International Conferences

1. Jounghun Park, Gilsang Yoon, Donghyun Go, Donghwi Kim, Ukju An, Jongwoo Kim, Jungsik Kim, and Jeong-Soo Lee, "Decomposition of Vertical and Lateral Charge Loss in Long-term Retention of 3-D NAND Flash Memory", IEEE International Reliability Physics Symposium (IRPS), Monterey, California, USA, Mar 26-30, 2023. 

2. Ukju An, Gilsang Yoon, Donghyun Go, Jounghun Park, Donghwi Kim, Jongwoo Kim, and Jeong-Soo Lee, "Temperature-induced Instability of Retention Characteristics in 3-D NAND Flash Memory", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Seoul, Korea, Mar 7-10, 2023. 

3. Jounghun Park, Gilsang Yoon, Donghyun Go, Donghwi Kim, Jungsik Kim, and Jeong-Soo Lee, "Analysis of Vt Gain and Related Lateral Migration Using Program-Erase-Program Pattern in 3-D NAND Flash Memory", International Conference on Solid State Devices and Materials (SSDM), ALL-VIRTUAL, Sep 6-9, 2021.

4. Donghyun Go, Gilsang Yoon, Jounghun Park, Donghwi Kim, Jungsik Kim, and Jeong-Soo Lee, "Electrical Variations of Non-Circular Cell Structure in 3D NAND Flash Memory Using TCAD-Machine Learning Framework", NANO KOREA 2021 Symposium, Goyang, Korea, July 7-9, 2021.

5. Gilsang Yoon, Donghyun Go, Jaeseok Jin, Jounghun Park, and Jeong-Soo Lee, "Impact of P/E cycling stress on trap distributions in tunneling and blocking layers for 3-D VNAND flash memory applications", International Conference on Electronics, Information, and Communication (ICEIC), Jeju, Korea, Jan 24-27, 2021.

6. Jounghun Park, Gilsang Yoon, Jaeseok Jin, Donghyun Go, and Jeong-Soo Lee, "Effects of Trap Charges in Spacer Region on Retention Variation in 3-D NAND Memory Cells", International Conference on Electronics, Information, and Communication (ICEIC), Jeju, Korea, Jan 24-27, 2021.

Domestic Conferences

1. 김종우, 윤길상, 고동현, 박정훈, 김동휘, 안욱주, 최재용, 이정수, "Improving Retention Characteristics in 3D NAND Flash Memory by Re-Program with Counter-Pulse", 반도체공학회 하계학술대회 (ISE 2023 Summer)

2. 안욱주, 윤길상, 고동현, 박정훈, 김동휘, 김종우, 이정수, "Retention Characteristics with Cross-Temperature Effects in 3-D NAND Flash Memory", 한국반도체학술대회 (KCS 2023)

3. 고동현, 윤길상, 박정훈, 김정식, 이정수, "Variation of Electrical and Memory Characteristics of Non-Circular Cell in 3D-NAND Flash Memory", 한국반도체학술대회 (KCS 2022)

4. 김동휘, 윤길상, 고동현, 박정훈, 이정수, "Analysis of Short-Term Retention in 3-D NAND Flash Memory Using Charge Control Pulse Scheme", 한국반도체학술대회 (KCS 2022)

5. 박정훈, 윤길상, 진재석, 고동현, 이정수, "Novel Trap Profiling in Nitride Layer Using Space Program for 3-D NAND Flash Memory", 한국반도체학술대회 (KCS 2021)

6. 윤길상, 고동현, 진재석, 박정훈, 이정수, "Investigation of Trap Profiles of Tunneling and Blocking Layers after P/E Cycling Stress in 3-D VNAND Flash Memory", 한국반도체학술대회 (KCS 2021)

7. 진재석, 윤길상, 고동현, 박정훈, 이정수, "Effect of Localized Noncircular Deformations on Memory Characteristics of 3-D NAND Cells", 한국반도체학술대회 (KCS 2021)

8. 고동현, 윤길상, 진재석, 박정훈, 이정수, "Trap Analysis from Hysteresis Characteristics of 3D-NAND Flash Memory", 한국반도체학술대회 (KCS 2021)

9. 조용진, 오현관, 윤길상, 진재석, 고동현, 박정훈, 이정수, "Effect of Interface Roughness on Program/Erase Efficiency for 3D Vertical NAND Flash Memory Applications," 한국반도체학술대회 (KCS2020)

10. 오현관, 조용진, 윤길상, 진재석, 고동현, 박정훈, 김성지, 백록현, 이정수, "3D-VNAND의 GIDL Erase 효율 향상을 위한 Macaroni Channel 구조 최적화," 추계 한국반도체디스플레이기술학회 (KSDT 2019)

11. 진재석, 오현관, 조용진, 윤길상, 고동현, 박정훈, 김성지, 백록현, 이정수, "3D V-NAND에서 인접 Cell State에 따른 Retention 특성 분석," 추계 한국반도체디스플레이기술학회 (KSDT 2019)

12. 윤길상, 오현관, 조용진, 진재석, 고동현, 박정훈, 김성지, 백록현, 이정수, "TSCIS 기법을 이용한 수직형 3D NAND Flash Memory에서의 트랩 분포 추출," 추계 한국반도체디스플레이기술학회 (KSDT 2019)

Patents

● Awards

1. BK21 제1회 POSTECH-EE 우수 연구성과 경진대회 장려상 (2022)